I am a PhD candidate at the Niels Bohr Institute’s Center for Quantum Devices, University of Copenhagen. My research focuses on experimental condensed matter physics, where I explore the fundamental properties of semiconducting materials. My project involves using molecular beam epitaxy (MBE) to grow high-quality semiconductor nanowires through a process called selective area growth (SAG). By controlling temperature, pressure, and source materials, we achieve precise nanowire fabrication. In collaboration with the Danish Technical University, we utilize cleanroom facilities to create defect-free substrates for SAG and nanowire-based devices. To study the grown nanowires, I employ advanced techniques like atomic force microscopy, scanning electron microscopy, and transmission electron microscopy. Additionally, we investigate their electrical properties at cryogenic temperatures to understand their behavior and potential for large-scale integration applications. My research aims to construct on-chip circuits using reproducible SAG nanowires. The outcomes have significant implications for electronics, computing, telecommunications, and energy generation, leading to enhanced functionality and performance in future devices.
Ph.D. Profile: Gunjan Piyush Nagda
